Avoiding dislocations in ion-implanted silicon
نویسندگان
چکیده
منابع مشابه
Avoiding dislocations in ion-implanted
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applic...
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Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...
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Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...
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An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 1992
ISSN: 0167-9317
DOI: 10.1016/0167-9317(92)90453-x